Low voltage low power FGMOS based current mirror

被引：1

作者：

Nurulain, D. ^{[1
]}

Musa, F. A. S. ^{[1
]}

Mohamad Isa, M. ^{[1
]}

Ahmad, N. ^{[1
]}

Kasjoo, S. R. ^{[1
]}

机构：

[1] Univ Malaysia Perlis, Sch Microelect Engn, Arau 02600, Perlis, Malaysia

来源：

INTERNATIONAL CONFERENCE ON APPLIED PHOTONICS AND ELECTRONICS 2017 (INCAPE2017) | 2017年 / 162卷

关键词：

D O I：

10.1051/epjconf/201716201048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the comparison of a conventional current mirror with the one utilizing floating gate MOSFET transistors (FGMOS) to achieve low power (LP) and low voltage (LV) design. The device structure has been simulated with 0.1 mu CMOS technology and 1.2V voltage supply by using SAED 90nm PDK with the Synopsys Custom Designer tool. The FGMOS circuit has shown to have low power consumption of 9.62mW, smaller threshold voltage of 0.2V and Iout of 20 mA. The improvement of 40.1% from conventional current mirror has shown the LV and LP capability of FGMOS transistor.

引用

页数：4

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