CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopy

被引：22
|
作者：
Demuynck, L
Arnault, JC
Polini, R
LeNormand, F
机构：
[1] IPCMS,GSI,F-67037 STRASBOURG,FRANCE
[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO SCI & TECHNOL CHIM,I-00133 ROME,ITALY
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
chemical vapor deposition; diamond; growth; nucleation; silicon oxides; x-ray photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(96)01501-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by photoemission spectroscopy. In both cases, a silicon carbide layer of a depth of 1-2 nm forms rapidly. The formation of this layer is apparently independent of subsequent diamond nucleation, which occurs after a long induction time on the virgin sample. The results are rationalized using Avrami's law of the kinetics of surface coverage by diamond islands.
引用
收藏
页码：871 / 875
页数：5
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