Initial growth stages of AlF3 on Cu(100): an STM study

被引：3
|
作者：
Moreno-Lopez, J. C. [1 ]
Passeggi, M. C. G., Jr. [1 ]
Ruano, G. [1 ]
Vidal, R. A. [1 ]
Ferron, J. [1 ]
机构：
[1] Inst Desarrollo Tecnol Ind Quim INTEC CONICET UNL, Lab Superficies & Interfaces, RA-3450 Guemes, Santa Fe, Argentina
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 11-12 | 2010年 / 7卷 / 11-12期
关键词：
insulator-metal interface; STM; AlF3; growth; annealing; ELECTRON-BEAM; THIN-FILMS; PHASE-TRANSITIONS; MICROSCOPY; RESIST;
D O I：
10.1002/pssc.200983806
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study we present results concerning the early growth stages of an insulator-metal interface by means of scanning tunnelling microscopy. In particular, we report the growth of aluminium fluoride (AlF3) islands over a Cu(100) surface at room temperature, from sub-monolayer coverages up to 1.25 monolayers. These islands cover the substrate with a single monolayer film up to depositions of 0.80 monolayers, with 3D growth beyond this coverage. High voltages (V >= 2.50 V) are needed to obtain STM images, showing the insulator character of the AlF3 islands. Important modifications are observed in the AlF3/Cu(100) surface after an annealing treatment. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2712 / 2715
页数：4
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