Highly polarized [GeOTe3] motif-driven structural order promotion and an enhanced second harmonic generation response in the new nonlinear optical oxytelluride Ba3Ge2O4Te3

被引:25
|
作者
Sun, Mengran [1 ,2 ,3 ]
Zhang, Xingyu [1 ,2 ,3 ]
Li, Chunxiao [1 ,2 ,3 ]
Liu, Wenhao [1 ,2 ,3 ]
Lin, Zheshuai [1 ]
Yao, Jiyong [1 ,2 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing Ctr Crystal Res & Dev, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
METAL CHALCOGENIDES; PHYSICAL-PROPERTIES; CRYSTAL-STRUCTURE; RECENT PROGRESS; IR; OXYSULFIDE; MIDDLE; SHG; SR2MGGE2O7; MG;
D O I
10.1039/d1tc05177f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The hybrid anion strategy has been illustrated to be an effective way to design and synthesize high-performance nonlinear optical (NLO) crystals. Herein, a new NLO-active oxytelluride with a highly polarized [GeOTe3] unit, Ba3Ge2O4Te3, has been successfully synthesized. Driven by the distorted [GeOTe3] motif, this compound exhibits interesting structural order promotion with its parent model Ba2ZnGe2O7 (BZGO). Moreover, on the basis of inheriting the polarization structure of BZGO, the Ba3Ge2O4Te crystal possesses an enhanced second harmonic generation (SHG) response benefiting from the partial replacement of O with the more polarized Te. Remarkably, the experimental results and theoretical calculations reveal that Ba3Ge2O4Te3 has the potential to be a promising infrared (IR) NLO material, encompassing a strong SHG response with good phase matchability, wide band gap, high laser damage threshold (LDT), and large birefringence of 0.14@2.09 mu m (5.7x AGSe, 10x BZGO) which overcomes the drawback of the small birefringence of AGSe. This work demonstrates that a highly polarized [GeOTe3] motif can be used as a new basic building block (BBB) for IR NLO materials, providing a new idea for the exploration of new functional oxytellurides.
引用
收藏
页码:150 / 159
页数:10
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