Microwave Annealing of Ion Implanted 4H-SiC

Ultra-fast high-temperature microwave annealing at temperatures as high as 2050 degrees C for 30 s has been performed on phosphorus ion-implanted 4H-SiC for phosphorus doping concentrations in the range 5 x 10(19) cm-(3) -8 x 10(20) cm(-3). For comparison, inductive heating furnace anneals were performed at 1800 degrees C -1950 degrees C for 5 min. Electrical resistivity of the P+-implanted samples decreased with increasing annealing temperature reaching a minimum value of 6.8 x 10(-4) Omega cm for 2050 degrees C/30 s microwave annealing and a slightly higher value for 1950 degrees C/5 min inductive heating furnace annealing. X-ray rocking curve measurements showed that the microwave annealing not only removed the lattice damage introduced by the ion-implantation process, but also the defects present in the original virgin sample as well.