Auger emission by impact of energetic atoms on Si monolayer(s)

被引：1
|
作者：
Valeri, S [1 ]
Baraldi, S [1 ]
Verucchi, R [1 ]
机构：
[1] DIPARTIMENTO FIS,I-41100 MODENA,ITALY
来源：
SURFACE SCIENCE | 1996年 / 365卷 / 02期
关键词：
atom-solid interactions; Auger electron spectroscopy; germanium; ion bombardment; silicon; sputter deposition; sputtering;
D O I：
10.1016/0039-6028(96)00724-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied the Auger electron emission induced by energetic (600 and 900 eV) atoms bombardment in oblique incidence on Si films from submonolayer to 4 monolayers (ML) thickness. Atomic and bulk contributions to the Si Auger emission were separately determined, and show a different trend versus film thickness. We ascribe these differences to the interplay between processes (different mechanisms of sputter ejection, and the Auger decay) that occur over different timescales. Atomic emission originating in prompt, projectile-target collisions is maximum at low coverage. Bulk emission intensity increases with coverage, as the cascade regime (target-target collisions) fully develops. Surface sensitivity has been found to be significantly larger for particle-induced Auger electron emission than for the conventional electron-induced Auger emission.
引用
收藏
页码：517 / 524
页数：8
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