Effect of disorder in MgB2 thin films -: art. no. 214502

被引:39
|
作者
Iavarone, M
Di Capua, R
Koshelev, AE
Kwok, WK
Chiarella, F
Vaglio, R
Kang, WN
Choi, EM
Kim, HJ
Lee, SI
Pogrebnyakov, AV
Redwing, JM
Xi, XX
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Univ Naples Federico II, Fac Ingn, INFM, Coherentia Dipartimento Sci Fis, I-80125 Naples, Italy
[3] Pohang Univ Sci & Technol, NCRICS, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[5] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
关键词
D O I
10.1103/PhysRevB.71.214502
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on scanning tunneling spectroscopy studies of magnesium diboride (MgB2) thin films grown by different techniques. The films have critical temperatures ranging between 28 and 41 K with very different upper critical fields. We find that the superconducting gap associated with the sigma band decreases almost linearly with decreasing critical temperature while the gap associated with the pi band is only very weakly affected in the range of critical temperatures above 30 K. In the sample with the lowest critical temperature (28 K) we observe a small increase of the pi gap that can only be explained in terms of an increase in the interband scattering. The tunneling data was analyzed in the framework of the two-band model. The magnetic-field-dependent tunneling spectra and the upper critical field measurements of these disordered samples can be consistently explained in terms of an increase of disorder that mostly affects the pi band in samples with reduced critical temperatures.
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页数:7
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