Oxidation of GaAs/AlGaAs heterostructures studied by atomic force microscopy in air

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作者：
Reinhardt, F
Dwir, B
Kapon, E
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APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 22期
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O59 [应用物理学];
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摘要：
Oxide growth on cleaved (01(1) over bar) cross sections of GaAs/AlGaAs heterostructures exposed to air was investigated using atomic force microscopy. Measurements of the height profile at constant force provide information on the oxide growth rate as a function of time and Al-mole fraction. We observe an initial field-aided oxidation mode that follows the Cabrera-Mott model for metal oxidation. After a critical time, oxidation proceeds more slowly, probably assisted by a thermal diffusion process. We used the dependence of oxide thickness on alloy composition for imaging the Al content in GaAs/AlGaAs heterostructures deposited on nonplanar substrates, with a lateral resolution of approximate to 1 nm. (C) 1996 American Institute of Physics.
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页码：3168 / 3170
页数：3
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