Performance of the beta-tool for low energy electron-beam proximity-projection lithography (LEEPL)

The two LEEPL beta-tools were completed in earlier 2002 and have been evaluated for the performance. 50nm CH patterns and 70nm L/S patterns are attained and the CD uniformity of 70nm L/S patterns with 37shots on a 200mm wafer is under 4nm (3sigma) with the LEEPL beta-tools. In addition, it is proved that the fine tuning deflector can correct a mask and a wafer distortion by giving a minute angle to the electron beam. The mask distortion with respect to orthogonality and magnification is decreased on a wafer by 1/5. By means of this fine tuning deflector, Mix & Match accuracy with any other lithography tools will be better and difficulty of 1X stencil mask fabrication will be easier. Referring to the data which has been obtained with the evaluation of the LEEPL beta-tools, the first LEEPL production tool dubbed "LEEPL-3000" is under construction to realize the satisfactory ability for 65nm node device fabrication. The shipping of the first LEEPL-3000 is scheduled in earlier 2003 and it is earlier than any other Next Generation Lithography technologies.