Quantitative SIMS analysis of SiC

被引：12
|
作者：
Kudriavtsev, Y
Villegas, A
Godines, A
Asomoza, R
Usov, I
机构：
[1] CINVESTAV, IPN, Dept Ingn Elect SEES, Mexico City, DF, Mexico
[2] Univ N Carolina, Curriculum Appl & Mat Sci, Chapel Hill, NC USA
来源：
SURFACE AND INTERFACE ANALYSIS | 2003年 / 35卷 / 06期
关键词：
SIMS; ion implantation; SiC;
D O I：
10.1002/sia.1561
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We performed a systematic study of ion-implanted 6H-SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon:(1) the matrix effect was insignificant in most cases. It was found that the SiO- cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright (C) 2003 John Wiley Sons, Ltd.
引用
收藏
页码：491 / 495
页数：5
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