Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

被引：10

作者：

Li, Huaping ^{[1
]}

Liu, Hongyu ^{[1
]}

Tang, Yifan ^{[1
]}

Guo, Wenmin ^{[1
]}

Zhou, Lili ^{[1
]}

Smolinski, Nina ^{[1
]}

机构：

[1] Atom Nanoelect Inc, Unit E, 440 Hindry Ave, Inglewood, CA 90301 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 32期

关键词：

single chirality; semiconducting single-walled carbon nanotube; schottky contact; nonlinear current-bias curves; thin-film transistors; large-scale electronic devices; THIN-FILM TRANSISTORS; DISPLAY; ARRAYS; DRIVER; INKS;

D O I：

10.1021/acsami.6b06647

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instrhments and a portable device. Both air-stable PMOS (p-type metal-oxide semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in.large scale showing the characteristics of fA off current and I-ON/I-OFF ratio of >1 X 10(8). CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52.

引用

页码：20527 / 20533

页数：7

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