Low-cost BiCMOS variable gain LNA at Ku-band with ultra-low power consumption

被引:29
|
作者
Ellinger, F [1 ]
Jäckel, H
机构
[1] ETH, Elect Lab, CH-8092 Zurich, Switzerland
[2] ETH, IBM Corp, Ctr Adv Silicon Elect, CH-8803 Ruschlikon, Switzerland
关键词
adaptive antenna combining; bipolar complementary metal-oxide semiconductor (BiCMOS) Ku-band; low-noise amplifier (LNA); monolithic microwave integrated circuit (MMIC); wireless local area network (WLAN);
D O I
10.1109/TMTT.2003.822020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-noise amplifier (LNA) at Ku-band with variable gain for adaptive antenna combining is presented. The compact MMIC is optimized for low-power-consuming wireless local area network applications and is fabricated using commercial 0.25-mum bipolar complementary metal-oxide semiconductor technology. At 16 GHz, a supply voltage of 1.5 V and a current consumption of only 1.5 mA, maximum gain of 14.5 dB, noise figure of 3.8 dB, and third-order intercept point at the output of 1 dBm are measured. At a supply voltage of only 1 V and a supply current of 0.9 mA, a gain of 11 dB was achieved, yielding a gain per supply power figure-of-merit of 12.2 dB/mW, which, to the knowledge of the authors, is the highest reported to date for Ku-band LNAs, independent of the technology used. The characteristics of different bias methods for amplitude control the cascode circuit are elaborately discussed. A bias-control method is proposed to significantly decrease the transmission phase variations versus gain.
引用
收藏
页码:702 / 708
页数:7
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