Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 μm

被引：0
|
作者：
Arafin, S. [1 ]
Bachmann, A. [1 ]
Vizbaras, K. [1 ]
Amann, M-C. [1 ]
机构：
[1] Walter Schottky Inst, D-85748 Garching, Germany
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on large aperture (D(BTJ) = 9 mu m) GaSb-based BTJ VCSELs at 2.62 mu m which show single-mode operation (SMSR > 30 dB) over the entire operating range. Devices are electrically-pumped and operate in continuous-wave mode.
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页码：47 / 48
页数：2
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