Etching of a diamond film by oxygen plasma

被引：0

作者：

Lu, XY ^{[1
]}

Jin, ZS

Hao, SQ

Peng, HY

Cao, QZ

机构：

[1] Jilin Univ, Natl Lab Superhard Mat, Changchun 130023, Peoples R China

[2] Henan Huanghe Ind Corp, Changge 461500, Peoples R China

来源：

NEW CARBON MATERIALS | 2003年 / 18卷 / 03期

关键词：

oxygen plasma; diamond film; etching; structure characteristic;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxygen plasma was generated by a microwave glow discharge method. The etching effect of oxygen plasma on CVD diamond films was investigated by changing the oxygen concentration and diamond film temperature in the system. The results show that etching effects were aggravated with increasing oxygen concentration and diamond film temperature. When the oxygen concentration and the diamond film temperature were lower, the grain boundaries of the diamond film were etched. This shows that the non-diamond carbon phase in diamond films exists mostly in the grain boundaries. From the etching effect on the ( 100) and (111) faces of the diamond film, it can been seen that the growth mode of the ( 100) face is two dimensional, while that of the (111) face is three dimensional.

引用

页码：191 / 195

页数：5