Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

被引：117
|
作者：
Zhao, L. [1 ]
Zhou, C. L. [1 ]
Li, H. L. [1 ]
Diao, H. W. [1 ]
Wang, W. J. [1 ]
机构：
[1] Chinese Acad Sci, Inst Elect Engn, Lab Solar Cell Technol, Beijing 100080, Peoples R China
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 06期
关键词：
HIT; transparent conductive oxide; work function; simulation;
D O I：
10.1016/j.solmat.2008.01.018
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Heterojunetion with intrinsic thin layer (HIT) solar cells fabricated on p-type silicon substrates usually demonstrate inferior performance than those formed on n-type substrates. The influence of various structure parameters on the performance of the c-Si(p)based bifacial HIT solar cell, i.e., the TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p(+))/TCO solar cell, was investigated in detail by computer simulation using the AFORS-HET software. The work function of the transparent conductive oxide was found to be a key factor to affect the solar cell performance. Detailed influence mechanisms were analysed. Accordingly, the design optimization of the bifacial HIT solar cells on c-Si(p) substrates was provided. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：673 / 681
页数：9
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