THz-photomixer based on quasi-ballistic transport

被引：56
|
作者：
Döhler, GH
Renner, F
Klar, O
Eckardt, M
Schwanhäusser, A
Malzer, S
Driscoll, D
Hanson, M
Gossard, AC
Loata, G
Löffler, T
Roskos, H
机构：
[1] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Max Planck Res Grp Opt Informat & Photon, D-91058 Erlangen, Germany
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93116 USA
[4] Goethe Univ Frankfurt, Inst Phys, D-6000 Frankfurt, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 07期
关键词：
D O I：
10.1088/0268-1242/20/7/007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on a novel concept for THz photomixers with high conversion efficiency up to several THz. In contrast to the conventional pin photomixer we can overcome the trade-off between either optimizing transit-time or RC-roll-off. Using quasi-ballistic transport in nano-pin-diodes the transport path can be optimized regarding both path length and transit time. Independently, the capacitance can be kept small by using a sufficiently large number of optimized nano-pin-diodes in series. The concept is presented in detail and first experimental results are reported which corroborate our theoretical expectations.
引用
收藏
页码：S178 / S190
页数：13
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