Calculation of conductance of quantum point contact in STM

被引:1
|
作者
Li, QG [1 ]
Xu, HX [1 ]
Li, Y [1 ]
Li, ZY [1 ]
机构
[1] Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China
关键词
STM; quantum point contact; quantum conductance;
D O I
10.7498/aps.54.5251
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The conductance of quantum point contact in scanning tunneling microscope is calculated by modal matching and scattering matrix method. The results show that the conductance of the nano-structure formed during quantum point contact in STM is quantized, which becomes more obvious as the radius and cone angle of the nano-structure decreases. The quantitative behavior could be observed more easily with semiconductors than with metals.
引用
收藏
页码:5251 / 5256
页数:6
相关论文
共 17 条
  • [1] ANDREAS W, 1991, J APPL PHYS, V70, P355
  • [2] Imaging the dimers in Si(111)-(7x7)
    Bengu, E
    Plass, R
    Marks, LD
    Ichihashi, T
    Ajayan, PM
    Iijima, S
    [J]. PHYSICAL REVIEW LETTERS, 1996, 77 (20) : 4226 - 4228
  • [3] QUANTIZED CONDUCTANCE IN ATOM-SIZED WIRES BETWEEN 2 METALS
    BRANDBYGE, M
    SCHIOTZ, J
    SORENSEN, MR
    STOLTZE, P
    JACOBSEN, KW
    NORSKOV, JK
    OLESEN, L
    LAEGSGAARD, E
    STENSGAARD, I
    BESENBACHER, F
    [J]. PHYSICAL REVIEW B, 1995, 52 (11) : 8499 - 8514
  • [4] ROLE OF QUANTUM COHERENCE IN SERIES RESISTORS
    BUTTIKER, M
    [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3020 - 3026
  • [5] CONFINEMENT OF ELECTRONS TO QUANTUM CORRALS ON A METAL-SURFACE
    CROMMIE, MF
    LUTZ, CP
    EIGLER, DM
    [J]. SCIENCE, 1993, 262 (5131) : 218 - 220
  • [6] CHARGE-DENSITY-WAVE STRUCTURE IN NBSE3 DETERMINED BY SCANNING TUNNELING MICROSCOPY
    DAI, ZX
    SLOUGH, CG
    COLEMAN, RV
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (10) : 1318 - 1321
  • [7] The manipulation of Cu subsurface interstitial atoms with scanning tunneling microscope
    Ge, SP
    Zhu, X
    Yang, WS
    [J]. ACTA PHYSICA SINICA, 2005, 54 (02) : 824 - 831
  • [8] Gu CZ, 2002, CHINESE PHYS, V11, P1042, DOI 10.1088/1009-1963/11/10/314
  • [9] HAJIME K, 1995, APPL PHYS LETT, V67, P2609
  • [10] ELECTRICAL RESISTANCE OF DISORDERED ONE-DIMENSIONAL LATTICES
    LANDAUER, R
    [J]. PHILOSOPHICAL MAGAZINE, 1970, 21 (172): : 863 - &