D-Band Silica-Based Package Substrate With EBG Structure for Flip-Chip Modules

被引：0
|
作者：
Ito, Masaharu [1 ]
Marumoto, Tsunehisa [1 ]
机构：
[1] NEC Corp Ltd, Tokyo, Japan
来源：
2019 49TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2019年
关键词：
dielectric substrates; electromagnetic propagation; millimeter wave devices; wireless communication; SUPPRESSION;
D O I：
10.23919/eumc.2019.8910833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a silica-based package substrate for flip-chip modules in D-band. An electromagnetic band-gap (EBG) structure is adopted in the substrate in order to suppress degradation of flipped IC performance due to parasitic propagation modes. By introducing a trench in the EBG structure, the structure can work in higher frequencies without thinning the substrate. A 150-GHz-band up-converter IC is mounted on the substrate by flip-chip bonding. No degradation is observed in RF performance compared with the unflipped one.
引用
收藏
页码：428 / 431
页数：4
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