Effect of interface states on sub-threshold response of III-V MOSFETs, MOS HEMTs and tunnel FETs

被引：30

作者：

Kao, W. C. ^{[1
]}

Ali, A. ^{[1
]}

Hwang, E. ^{[1
]}

Mookerjea, S. ^{[1
]}

Datta, S. ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 12期

关键词：

Interface states; InGaAs; MOSFET; HEMT; Tunnel FET;

D O I：

10.1016/j.sse.2010.07.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of interface states on the current-voltage characteristics in the sub-threshold region of three different types of III-V based transistor architectures has been studied using a drift-diffusion based numerical simulator Experimentally extracted interface state density profile is included in the simulation to analyze their effect on the sub threshold response of InGaAs based MOSFETs MOS HEMTs and tunnel FETs Based on the Fermi-level position at the oxide/semiconductor interface and the corresponding interface state density (D-it) the sub-threshold response for the three devices can vary with tunnel FETs is having the least sub threshold degradation due to D-it (C) 2010 Elsevier Ltd All rights reserved

引用

页码：1665 / 1668

页数：4

共 14 条

[1] MOS Interface Control Technologies for III-V/Ge Channel MOSFETs
Takagi, S.
Zhang, R.
Hoshii, T.
Taoka, N.
Takenaka, M.
PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9, 2011, 41 (03): : 3 - 20
[2] The impact of interface states on the mobility and the drive current of III-V MOSFETs
Osgnach, P.
Caruso, E.
Lizzit, D.
Palestri, P.
Esseni, D.
Selmi, L.
2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2014, : 21 - 24
[3] Monte Carlo analysis of III-V PIN diodes for Tunnel-FETs and Impact Ionization-MOSFETs
Vasallo, B. G.
Talbo, V.
Gonzalez, T.
Lechaux, Y.
Wichmann, N.
Bollaert, S.
Mateos, J.
2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2017,
[4] Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Talbo, V.
Mateos, J.
Gonzalez, T.
Lechaux, Y.
Wichmann, N.
Bollaert, S.
Vasallo, B. G.
19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, 647
[5] High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
Yoshida, S.
Lin, H. C.
Vais, A.
Alian, A.
Franco, J.
El Kazzi, S.
Mols, Y.
Miyanami, Y.
Nakazawa, M.
Collaert, N.
Watanabe, H.
Thean, A.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 5 (06): : 480 - 484
[6] Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing
Dewey, G.
Chu-Kung, B.
Boardman, J.
Fastenau, J. M.
Kavalieros, J.
Kotlyar, R.
Liu, W. K.
Lubyshev, D.
Metz, M.
Mukherjee, N.
Oakey, P.
Pillarisetty, R.
Radosavljevic, M.
Then, H. W.
Chau, R.
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[7] Process-Induced Power-Performance Variability in Sub-5-nm III-V Tunnel FETs
Xiang, Yang
Verhulst, Anne S.
Yakimets, Dmitry
Parvais, Bertrand
Mocuta, Anda
Groeseneken, Guido
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (06) : 2802 - 2808
[8] Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering
Kim, S. H.
Yokoyama, M.
Taoka, N.
Nakane, R.
Yasuda, T.
Ichikawa, O.
Fukuhara, N.
Hata, M.
Takenaka, M.
Takagi, S.
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[9] DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS
SPICER, WE
EGLASH, S
LINDAU, I
SU, CY
SKEATH, PR
THIN SOLID FILMS, 1982, 89 (04) : 447 - 460
[10] Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4-300 K
Kang, Min-Soo
Toprasertpong, Kasidit
Takenaka, Mitsuru
Oka, Hiroshi
Mori, Takahiro
Takagi, Shinichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SC)

← 1 2 →