Strong yellow electroluminescence from manganese-silicon-implanted silicon dioxide layers

被引：0
|
作者：
Novikov, S [1 ]
Ovchinnikov, V [1 ]
Härkönen, J [1 ]
Sinkkonen, J [1 ]
机构：
[1] Helsinki Univ Technol, Dept Elect & Commun Engn, Electron Phys Lab, FIN-02015 Helsinki, Finland
来源：
SILICON-BASED AND HYBRID OPTOELECTRONICS III | 2001年 / 4293卷
关键词：
electroluminescence; ion implantation; Si/SiO2; mn doped SiO2;
D O I：
10.1117/12.426935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature (RT) electroluminescence (EL) was obtained for the first time from Mn enriched Si/SiO2 structure. Si+ or Ar+ stimulated knock-on implantation through 20 nm Mn film with the subsequent annealing was used for EL device fabrication. Devices exhibit bright emission band at the 2.06 eV. The position does neither depend on implanted ion dose nor annealing procedure. EL is visible by naked eye even at current density as low as 1.5x10(-6) Acm(-2) Continuous wave external quantum efficiency 1.1x10(-3) and power efficiency 1.5x10(-5) have been achieved.
引用
收藏
页码：173 / 180
页数：8
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