Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

被引：0
|
作者：
Tsutsui, Kazuo [1 ]
Kobayashi, Yusuke [1 ]
Kakushima, Kuniyuki [1 ]
Ahmet, Parhat [2 ]
Rao, V. Ramgopal [3 ]
Iwai, Hiroshi [2 ]
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, J2-69,4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
来源：
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS | 2011年 / 470卷
基金：
日本学术振兴会;
关键词：
variability; threshold voltage; sensitivity; short channel effect; FinFET; double gate; SIMULATION;
D O I：
10.4028/www.scientific.net/KEM.470.194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To conduct analyses of variability of threshold voltage (V-th) in FinFETs whose structures are based on the ITRS, sensitivity coefficients of variations of V-th caused by the fluctuation of principal device parameters were derived by device simulation. The sensitivity coefficient correlated with each device parameter was separated into two factors: one due to an intrinsic mechanism (1D factor) and another due to short-channel effects (2D factor). The 1D and 2D factors were found to cancel each other out in some cases, thereby reducing the sensitivity coefficient. Based on these results, FinFETs with various structures were examined and controlling short-channel effects was demonstrated to be an effective way to reduce the variation in the threshold voltage.
引用
收藏
页码：194 / +
页数：2
相关论文
共 50 条
  • [1] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects
    Kobayashi, Yusuke
    Tsutsui, Kazuo
    Kakushima, Kuniyuki
    Ahmet, Parhat
    Rao, V. Ramgopal
    Iwai, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0442011 - 0442016
  • [2] ANALYSIS OF ANNEALING EFFECT ON THE THRESHOLD VOLTAGE UNIFORMITY OF GAAS FIELD-EFFECT TRANSISTORS
    WATANABE, K
    HYUGA, F
    INOUE, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) : 2815 - 2820
  • [3] Tunable threshold voltage and flatband voltage in pentacene field effect transistors
    Wang, Annie
    Kymissis, Ioannis
    Bulovic, Vladimir
    Akinwande, Akintunde I.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [4] THRESHOLD VOLTAGE VARIATIONS WITH TEMPERATURE IN MOS TRANSISTORS
    WANG, R
    DUNKLEY, J
    DEMASSA, TA
    JELSMA, LF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 386 - &
  • [5] The concept of "threshold voltage" in organic field-effect transistors
    Horowitz, G
    Hajlaoui, R
    Bouchriha, H
    Bourguiga, R
    Hajlaoui, M
    ADVANCED MATERIALS, 1998, 10 (12) : 923 - +
  • [6] THRESHOLD VOLTAGE INSTABILITY OF MOS FIELD-EFFECT TRANSISTORS
    SHANKAR, SR
    MISRA, RP
    RAND, HT
    MICROELECTRONICS AND RELIABILITY, 1978, 17 (02): : 305 - 308
  • [7] Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors
    Mizubayashi, W.
    Fukuda, K.
    Mori, T.
    Endo, K.
    Liu, Y. X.
    Matsukawa, T.
    O'uchi, S.
    Ishikawa, Y.
    Migita, S.
    Morita, Y.
    Tanabe, A.
    Tsukada, J.
    Yamauchi, H.
    Masahara, M.
    Ota, H.
    SOLID-STATE ELECTRONICS, 2015, 111 : 62 - 66
  • [8] THRESHOLD VOLTAGE OF NARROW CHANNEL FIELD-EFFECT TRANSISTORS
    KROELL, KE
    ACKERMAN, GK
    SOLID-STATE ELECTRONICS, 1976, 19 (01) : 77 - 81
  • [9] Threshold-Voltage Modeling of Bulk Fin Field Transistors by Considering Surface Potential Lowering
    Choi, Byung-Kil
    Lee, Jong-Ho
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3396 - 3402
  • [10] EFFECTS OF DISLOCATIONS ON THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS
    SUCHET, P
    DUSEAUX, M
    MALUENDA, J
    MARTIN, GM
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1097 - 1101
12345