Technology CAD Simulation Study for Self-Heating Effects in Si/SiGe HBTs on Thin-Film SOI Substrates

被引：0
|
作者：
Liao, Shu-Hui [1 ]
Chang, Shu-Tong [2 ]
Wang, Wei-Ching [2 ]
机构：
[1] Chung Chou Inst Technol, Dept Elect Engn, Changhua, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
来源：
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年
关键词：
THERMAL-RESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self-heating characteristic of Si/SiGe HBTs on thin-film SO I substrate is investigated by a technology CAD simulator. We examine both of the buried-oxide thickness and the silicon thickness effects on the device characteristics for thermal resistance. Simulation results show that the self-heating effect is not serious for the device under the situation of smaller oxide thickness. Besides, the enhanced silicon thickness can degrade the thermal resistance and thus needs to be carefully considered in device design. The thermal resistance characteristics revealed for Si/SiGe HBTs on thin-film SOI substrate may help to establish more accurate thermal model for reliability of circuit design and device technology optimization.
引用
收藏
页码：1268 / +
页数：2
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