MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules

被引:7
|
作者
Tian, Changfa [1 ]
Wei, Liubo [1 ]
Jiang, Jie [1 ]
机构
[1] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
Electric-double-layer transistor; Multiterminal gates; Synaptic weights; Spike-timing-dependent plasticity learning rules; DOUBLE-LAYER TRANSISTORS; PLASTICITY; SYNAPSE; MOS2; DEVICES;
D O I
10.1016/j.sse.2022.108386
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Synaptic devices with dynamic properties are essential for constructing a neuromorphic system. In this paper, a multiterminal in-plane-gate ionic MoS2 transistor with dynamic synaptic characteristics is demonstrated by using poly (vinyl alcohol) as the laterally coupled proton-conducting electrolyte. The device can be regulated at a low operating voltage of 2 V due to the significant electric-double-layer effect. Typical synaptic behaviors such as excitatory postsynaptic current, inhibitory postsynaptic current, paired-pulse facilitation, and dynamic filtering are successfully mimicked. The ability of multiterminal coplanar transistor to regulate synaptic weights depending on spatial orientation is also demonstrated in this device. More importantly, orientation-dependent spike-timing-dependent plasticity learning rules can be successfully realized through this multiterminal ionic transistor. Such device may provide a promising way to construct spatiotemporally-correlated neuromorphic systems.
引用
收藏
页数:8
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