Surface band structure of Bi1-xSbx(111)

被引:41
|
作者
Benia, Hadj M. [1 ]
Strasser, Carola [1 ]
Kern, Klaus [1 ,2 ]
Ast, Christian R. [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland
来源
PHYSICAL REVIEW B | 2015年 / 91卷 / 16期
关键词
TOPOLOGICAL INSULATORS;
D O I
10.1103/PhysRevB.91.161406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theoretical and experimental studies agree that Bi1-xSbx (0.07 <= x <= 0.21) is a three-dimensional topological insulator. However, there is still a debate on the corresponding Bi1-xSbx (111) surface band structure. While three spin polarized bands have been claimed experimentally, theoretically, only two surface bands appear, with the third band being attributed to surface imperfections. Here, we address this controversy using angle-resolved photoemission spectroscopy (ARPES) on Bi1-xSbx films. To minimize surface imperfections, we have optimized the sample growth recipe. We have measured the evolution of the surface band structure of Bi1-xSbx with x increasing gradually from x = 0 to x = 0.6. Our ARPES data show better agreement with the theoretical calculations, where the system is topologically nontrivial with two surface bands.
引用
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页数:5
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