The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

被引：25

作者：

Jung, Hyung-Suk ^{[1
,2
]}

Jang, Jae Hyuck ^{[1
,2
]}

Cho, Deok-Yong ^{[3
,4
]}

Jeon, Sang-Ho ^{[1
,2
]}

Kim, Hyo Kyeom ^{[1
,2
]}

Lee, Sang Young ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, CSCMR, Seoul 151744, South Korea

[4] Seoul Natl Univ, Dept Phys & Astron, FPRD, Seoul 151744, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

ATOMIC LAYER DEPOSITION; THERMAL-STABILITY; THIN-FILMS;

D O I：

10.1149/1.3551460

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 600 degrees C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO2 were attributed to the negligible increase in the interfacial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO2 after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of conducting paths through the grain boundaries. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3551460] All rights reserved.

引用

页码：G17 / G19

页数：3

共 50 条

[1] Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
Bothe, Kyle M.
von Hauff, Peter A.
Afshar, Amir
Foroughi-Abari, Ali
Cadien, Kenneth C.
Barlage, Douglas W.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (12) : 4119 - 4124
[2] Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing
Lai, CS
Wu, WC
Wang, JC
Cha, TS
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 2893 - 2897
[3] Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric
Li, Chen-Chien
Chang-Liao, Kuei-Shu
Chi, Wei-Fong
Li, Mong-Chi
Chen, Ting-Chun
Su, Tzu-Hsiang
Chang, Yu-Wei
Tsai, Chia-Chi
Liu, Li-Jung
Fu, Chung-Hao
Lu, Chun-Chang
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (01) : 12 - 15
[4] Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes
Suh, YS
Lazar, H
Chen, B
Lee, JH
Misra, V
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (09) : F138 - F141
[5] Electrical characteristics of ozone-oxidized HfO2 gate dielectrics
Sim, Hyunjun
Chang, Hyosik
Hwang, Hyunsang
[J]. 2003, Japan Society of Applied Physics (42):
[6] Electrical characteristics of ozone-oxidized HfO2 gate dielectrics
Sim, H
Chang, H
Hwang, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1596 - 1597
[7] CRYSTALLIZATION OF ZRO2 AND HFO2 UNDER HYDROTHERMAL CONDITIONS
KUZNETSO.VA
SIDORENK.OV
[J]. SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 13 (04): : 651 - &
[8] Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD
Triyoso, DH
Ramon, M
Hegde, RI
Roan, D
Garcia, R
Baker, J
Wang, XD
Fejes, P
White, BE
Tobin, PJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (03) : G203 - G209
[9] Effects of ZrO2 doping on HfO2 resistive switching memory characteristics
Ryu, Seung Wook
Cho, Seongjae
Park, Joonsuk
Kwac, Jungsuk
Kim, Hyeong Joon
Nishi, Yoshio
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (07)
[10] The crystallization process of HfO2 and ZrO2 under hydrothermal conditions
Stefanic, G
Music, S
Molanov, K
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 387 (1-2) : 300 - 307

← 1 2 3 4 5 →