Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

被引：98

作者：

Tosi, Alberto ^{[1
]}

Calandri, Niccolo ^{[1
]}

Sanzaro, Mirko ^{[1
]}

Acerbi, Fabio ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2014年 / 20卷 / 06期

关键词：

Dark count rate (DCR); detection efficiency; InGaAs/InP; near-infrared (NIR) detector; photon counting; single photon; single-photon avalanche diode (SPAD); timing jitter; MULTIPLICATION; PHOTODIODE;

D O I：

10.1109/JSTQE.2014.2328440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-mu m active-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant similar to 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.

引用

页码：192 / 197

页数：6

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