Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

被引：15
|
作者：
Chen, W. [1 ]
Chamele, N. [1 ]
Gonzalez-Velo, Y. [1 ]
Barnaby, H. J. [1 ]
Kozicki, M. N. [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 09期
关键词：
PMC; CBRAM; RRAM; Cu; silica; low temperature; direct tunneling; RANDOM-ACCESS MEMORY;
D O I：
10.1109/LED.2017.2734743
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.
引用
收藏
页码：1244 / 1247
页数：4
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