Multiscale real-space quantum-mechanical tight-binding calculations of electronic structure in crystals with defects using perfectly matched layers

被引:1
|
作者
Pourmatin, Hossein
Dayal, Kaushik [1 ]
机构
[1] Carnegie Mellon Univ, Dept Civil & Environm Engn, Pittsburgh, PA 15213 USA
基金
美国安德鲁·梅隆基金会; 美国国家科学基金会;
关键词
Electron scattering; Crystal defects; Tight-binding; Waves in periodic media; Non-reflecting boundary conditions; ABSORBING BOUNDARY-CONDITIONS; SCHRODINGER-EQUATION; SEMICONDUCTORS; ELASTODYNAMICS; WAVES;
D O I
10.1016/j.jcp.2016.07.024
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We consider the scattering of incident plane-wave electrons from a defect in a crystal modeled by the time-harmonic Schrodinger equation. While the defect potential is localized, the far-field potential is periodic, unlike standard free-space scattering problems. Previous work on the Schrodinger equation has been almost entirely in free-space conditions; a few works on crystals have been in one-dimension. We construct absorbing boundary conditions for this problem using perfectly matched layers in a tight-binding formulation. Using the example of a point defect in graphene, we examine the efficiency and convergence of the proposed absorbing boundary condition. (C) 2016 Elsevier Inc. All rights reserved.
引用
收藏
页码:115 / 125
页数:11
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