Accelerated Aging System for Prognostics of Power Semiconductor Devices

被引:0
|
作者
Celaya, Jose R. [1 ]
Wysocki, Philip [2 ]
Vashchenko, Vladislav [3 ]
Saha, Sankalita [4 ]
Goebel, Kai [5 ]
机构
[1] SGT Inc, NASA Ames Res Ctr, Intelligent Syst Div, Moffett Field, CA 94040 USA
[2] NASA Ames Res Ctr, ASRC Aerospace, Moffett Field, CA USA
[3] Natl Semicond Corp, Santa Clara, CA USA
[4] MCT Inc, NASA Ames Res Ctr, Intelligent Syst Div, Moffett Field, CA USA
[5] NASA Ames Res Ctr, Intelligent Syst Div, Moffett Field, CA USA
来源
关键词
prognostics; electronics prognostics; accelerated life testing; RELIABILITY; MODULES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.
引用
收藏
页码:118 / 123
页数:6
相关论文
共 50 条
  • [1] Accelerated Aging in Electrolytic Capacitors for Prognostics
    Celaya, Jose R.
    Kulkarni, Chetan
    Saha, Sankalita
    Biswas, Gautam
    Goebel, Kai
    [J]. 2012 PROCEEDINGS - ANNUAL RELIABILITY AND MAINTAINABILITY SYMPOSIUM (RAMS), 2012,
  • [2] Accelerated Aging Experiments for Capacitor Health Monitoring and Prognostics
    Kulkarni, Chetan S.
    Celaya, Jose R.
    Biswas, Gautam
    Goebel, Kai
    [J]. 2012 IEEE AUTOTESTCON PROCEEDINGS, 2012, : 356 - 361
  • [3] THERMALLY ACCELERATED AGING OF SEMICONDUCTOR COMPONENTS
    REYNOLDS, FH
    [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (02) : 212 - 222
  • [4] Power semiconductor devices - Development trends and system interactions
    Lorenz, Leo
    [J]. 2007 POWER CONVERSION CONFERENCE - NAGOYA, VOLS 1-3, 2007, : 333 - 339
  • [5] Data Driven Prognostics for Failure of Power Semiconductor Packages
    Ahsan, Mominul
    Stoyanov, Stoyan
    Bailey, Chris
    [J]. 2018 41ST INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE), 2018,
  • [6] SEMICONDUCTOR POWER DEVICES
    TUCHKEVI.VM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1336 - &
  • [7] On the dynamic thermal behavior and the accelerated aging of power system components
    Saied, MM
    ElShewy, H
    Fetih, NH
    [J]. ELECTRIC MACHINES AND POWER SYSTEMS, 1996, 24 (02): : 159 - 170
  • [8] Experimental measurement and simulation of thermal performance due to aging in power semiconductor devices
    Katsis, DC
    van Wyk, JD
    [J]. CONFERENCE RECORD OF THE 2002 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4, 2002, : 1746 - 1751
  • [9] A model-based approach for prognostics of power semiconductor modules
    Vulli, Aleksi
    Schlottig, Gerd
    Orkisz, Michal
    Firla, Marcin
    Bianda, Enea
    [J]. 2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
  • [10] PROGNOSTICS OF DAMAGE ACCRUAL IN SSL LUMINAIRES AND DRIVERS SUBJECTED TO HTSL ACCELERATED AGING
    Lall, Pradeep
    Sakalaukus, Peter
    Davis, Lynn
    [J]. PROCEEDINGS OF THE ASME INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, 2013, VOL 1, 2014,