Effect of remanent magnetization of ferromagnetic thin film on I-V characteristics of MOS transistor:: I-V characteristics by epitaxial (Mn, Zn)Fe2O4 thin film on gate area

被引：0

作者：

Shimizu, K ^{[1
]}

Mizukami, S ^{[1
]}

Wakiya, N ^{[1
]}

Shinozaki, K ^{[1
]}

Mizutani, N ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan

来源：

ELECTROCERAMICS IN JAPAN VI | 2003年 / 248卷

关键词：

ferrite; Hall effect; magnetic field; memory; electric properties; PLD;

D O I：

10.4028/www.scientific.net/KEM.248.165

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(111) epitaxial (Mn, Zn)Fe2O4 thin film and yttria-stabilized zirconia (YSZ) buffer layers were deposited on the gate area of metal oxide semiconductor (MOS) transistor by pulsed laser deposition (PLD) using a KrF excimer laser at room temperature. Rectangular-shaped (Mn, Zn)Fe2O4 films were fabricated by wet chemical etching and liftoff processes. Films with a composition (molar ratio) of Mn:Zn:Fe=20:5:75 had a saturation magnetization value of 420 emu/cm(3) after annealing at 800degreesC for 1 hour. The effect of remanent magnetization on the drain current - drain voltage (I-D-V-D) characteristics of MOS transistor was examined. (Mn, Zn)Fe2O4 films on the gate area of the MOS transistors modified the channel of field effect transistor (FET) channel by Hall effect(1)). When the sign of remanent magnetization changed, Hall effect changes the conductance of drain current (I-D).

引用

页码：165 / 168

页数：4

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