Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

被引：106
|
作者：
Lardenois, S [1 ]
Pascal, D
Vivien, L
Cassan, E
Laval, S
Orobtchouk, R
Heitzmann, M
Bouzaida, N
Mollard, L
机构：
[1] Univ Paris 11, UMR 8622, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Inst Natl Sci Appl, CNRS, UMR 5511, Lab Phys Mat, F-69100 Villeurbanne, France
[3] CEA, Lab Elect Technol Informat, F-38054 Grenoble 9, France
来源：
OPTICS LETTERS | 2003年 / 28卷 / 13期
关键词：
D O I：
10.1364/OL.28.001150
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 mum. Corner mirrors that allow compact 90degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are similar to0.4 dB/cm and similar to0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are similar to1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters. (C) 2003 Optical Society of America.
引用
收藏
页码：1150 / 1152
页数：3
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