High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

被引:0
|
作者
Kim, MG [1 ]
Lee, SW [1 ]
Park, SS [1 ]
Oh, DK [1 ]
Lee, HT [1 ]
Kim, HM [1 ]
Pyun, KE [1 ]
机构
[1] Elect & Telecommun Res Inst, Optoelect Sect, Taejon 305350, South Korea
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D O I
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have demonstrated stable modulation characteristics of the gain coupled distributed feedback (GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW (multiple-quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17 GHz. We also found that the alpha parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output.
引用
收藏
页码:S383 / S387
页数:5
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