Polycrystalline silicon thin film solar cell with efficiency of 10% on non-silicon substrate

被引：0

作者：

Li, ZM ^{[1
]}

Xu, Y ^{[1
]}

Yu, Y ^{[1
]}

Liao, XB ^{[1
]}

机构：

[1] Beijing Solar Energy Res Inst, Beijing, Peoples R China

来源：

ENERGY CONVERSION AND APPLICATION, VOL I AND II | 2001年

关键词：

RTCVD(rapid thermal chemical vapor deposition); ZMR(zone melt recrystallization); thin film solar cell;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Polycrystalline silicon solar cells was fabricated on the silicon substrate covered with the SiO2 film by RTCVD and ZMR, and the best efficiency reaching up to 10.21%, this is the best result of polycrystalline si I icon thin film solar cells on non-silicon substrate in China at present. The parameter of solar cell is: I-sc=25.38mA, V-oc=622.2mV, FF=0.6913, Eff=10.21%, area=1.07 cm(2) under the standard measuring condition (AM 1.5, 25 degreesC). Because the thickness of thin film solar cell is thinner, and there are more defaults on the surface of thin film, which cause serious surface recombination, The spectrum response of solar cell in long and short wave region is not as good as the mono-crystalline silicon solar cell.

引用

页码：1185 / 1187

页数：3

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