First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide (vol 19, pg 6037, 2019)

被引：2

作者：

Jaeger, Richard C. ^{[1
]}

Chen, Jun ^{[1
]}

Suhling, Jeffrey C. ^{[1
]}

Fursin, Leonid ^{[2
]}

机构：

[1] Auburn Univ, Auburn, AL 36849 USA

[2] United Silicon Carbide Inc, Monmouth Jct, NJ 08852 USA

来源：

IEEE SENSORS JOURNAL | 2020年 / 20卷 / 14期

关键词：

Piezoresistance; Temperature measurement; Voltage measurement; MOS devices; Stress; Temperature sensors;

D O I：

10.1109/JSEN.2020.2982630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We recently realized that the basic piezoresistivity matrix for 4H-SiC in the above paper [1] was not correct [2], [3]. The matrix and subsequent results are corrected here, and the section and equation numbers utilized here correspond to those in the original paper [1].

引用

页码：8186 / 8187

页数：2

共 5 条

[1] First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide
Jaeger, Richard C.
Chen, Jun
Suhling, Jeffrey C.
Fursin, Leonid
IEEE SENSORS JOURNAL, 2019, 19 (15) : 6037 - 6045
[2] Hydrostatic Calibration of the Piezoresistive Coefficients on 4H Silicon Carbide
Chen, Jun
Wu, Jing
Suhling, Jeffrey C.
Jaeger, Richard C.
PROCEEDINGS OF THE TWENTIETH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2021), 2021, : 1183 - 1189
[3] Measurement of the Temperature Dependence of the Piezoresistive Coefficients of 4H Silicon Carbide
Chen, Jun
Suhling, Jeffrey C.
Jaeger, Richard C.
PROCEEDINGS OF THE NINETEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2020), 2020, : 1296 - 1301
[4] Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide
Sato, Hiroaki
Abe, Makoto
Shoji, Ichiro
Suda, Jun
Kondo, Takashi
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2009, 26 (10) : 1892 - 1896
[5] Negative-U centers in 4H silicon carbide (vol 58, pg R10119, 1998)
Hemmingsson, CG
Son, NT
Ellison, A
Zhang, J
Janzén, E
PHYSICAL REVIEW B, 1999, 59 (11): : 7768 - 7768

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