Special Features of Reconstruction of Defect Structure of Epitaxial Films of CeO2 and La2Zr2O7 in Alternating Magnetic Field

Results obtained by methods of X-ray spectroscopy and atomic force microscopy (AFM) and special features of reconstruction of the defect structure of epitaxial films of cerium oxide CeO2 and lanthanum zirconate La2Zr2O7 during their processing in an alternating magnetic field or during their magnetic structural processing (MSP) are reported. The epitaxial films of CeO2 and La2Zr2O7 are seed and barrier layers of a buffer current-carrying element of a high-temperature superconducting second-generation wire (HTSC-2 wires). Changes in the crystalline structure of epitaxial films of CeO2 and La2Zr2O7 are reflected in changes in their X-ray diffraction patterns and AFM data. The X-ray spectroscopy indicated a change in the crystal structure of a biaxially textured substrate of Ni-5% W alloy as a result of MSP of sample buffer CeO2/La2Zr2O7. The obtained data indicate the existence of complex and fast processes in the crystal structure of epitaxial films of CeO2 and La2Zr2O7 and of Ni-5% W alloy at MSP, which result in irreversible changes in the crystal structure of these materials; in other words, it is found that, in the epitaxial films of CeO2 and La2Zr2O7 and in the Ni-5% W alloy, a magnetic structural effect is observed in an alternating magnetic field [1-3].