HgCdTe Photon Trapping Structure for Broadband Mid-Wavelength Infrared Absorption

被引：26

作者：

Wehner, J. G. A. ^{[1
]}

Smith, E. P. G. ^{[1
]}

Venzor, G. M. ^{[1
]}

Smith, K. D. ^{[1
]}

Ramirez, A. M. ^{[1
]}

Kolasa, B. P. ^{[1
]}

Olsson, K. R. ^{[1
]}

Vilela, M. F. ^{[1
]}

机构：

[1] Raytheon Vis Syst, Goleta, CA 93117 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 08期

关键词：

HgCdTe; high operating temperature; photonic crystal;

D O I：

10.1007/s11664-011-1703-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the use of photon trapping structures in HgCdTe detectors for use in mid-wavelength infrared (MWIR) detectors. Model results based on finite-difference time-domain electromagnetic simulation and a finite-element model of electronic performance are compared with Fourier-transfer infrared (FTIR) spectroscopy and measured device performance results. Reduced fill factor devices with lowered dark current and no appreciable decrease in quantum efficiency are demonstrated. This is compared against devices with reduced fill factor but no photon trapping capability, which exhibit reduced dark current but also reduced quantum efficiency.

引用

页码：1840 / 1846

页数：7

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