Systematic Study of Medium States in Spin-Transfer Torque Magnetoresistance Random Access Memory and Their Implication for the Bit Error Rate

被引：3
|
作者：
Gao, Shifan [1 ]
Chen, Bing [1 ]
Zhao, Yi [1 ,2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn & Informat Sci, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 04期
关键词：
Switches; Writing; Magnetic tunneling; Torque; Temperature dependence; Reliability; Magnetoresistance; Spin-transfer torque magnetoresistance random access memory (STT-MRAM); magnetic tunnel junction (MTJ); ultrafast electrical characterization; domain wall motion; medium state; intermediate state; bifurcated switching; ballooning; write error rate;
D O I：
10.1109/LED.2020.2976100
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Medium states are common anomalies in spin-transfer torque magnetoresistance random access memory (STT-MRAM). In this work, these medium states are systematically studied using an ultrafast characterization system and compared with the normal parallel (P) and antiparallel (AP) states. The medium states that exist in the switching processes both from the AP state to the P state (AP2P) and from the P state to the AP state (P2AP) are presented. To obtain a deeper understanding of the medium states, the temperature and voltage dependences of the state rates are investigated. It is found that the medium states are more persistent at low temperatures and have a state rate with a symmetric voltage dependence. Consequently, it is confirmed that medium states should be one of the sources of bifurcated switching in STT-MRAMs.
引用
收藏
页码：557 / 560
页数：4
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