IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics

被引:19
|
作者
Zhu, Ying [1 ,2 ]
He, Yongli [1 ,2 ]
Chen, Chunsheng [1 ,2 ]
Zhu, Li [1 ,2 ]
Wan, Changjin [1 ,2 ]
Wan, Qing [1 ,2 ]
机构
[1] Nanjing Univ, Sch Elect & Sci Engn, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
基金
国家重点研发计划;
关键词
neuromorphic transistors; IGZO TFTs; temperature-dependent synaptic plasticity; logic transformation; RELAXATION; STRENGTH; NEURONS;
D O I
10.1007/s11432-021-3326-6
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Temperature is one of the vital influential factors for all physiological and mental activities. Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception. Here, indium-gallium-zinc-oxide (IGZO) based electrical-double-layer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic functions. The influence of temperature on the synaptic plasticity, including excitatory postsynaptic current, paired-pulse facilitation, and dynamic filtering was investigated. Interestingly, temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes. Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching, which is interesting for neuromorphic systems with biological fidelity.
引用
收藏
页数:8
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