Temperature is one of the vital influential factors for all physiological and mental activities. Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception. Here, indium-gallium-zinc-oxide (IGZO) based electrical-double-layer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic functions. The influence of temperature on the synaptic plasticity, including excitatory postsynaptic current, paired-pulse facilitation, and dynamic filtering was investigated. Interestingly, temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes. Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching, which is interesting for neuromorphic systems with biological fidelity.
机构:
School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversitySchool of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
Chunsheng CHEN
Li ZHU
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School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversitySchool of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
Li ZHU
Changjin WAN
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School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversitySchool of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
Changjin WAN
Qing WAN
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School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversitySchool of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
机构:
Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Park, Junhyeong
Yun, Yumin
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Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Yun, Yumin
Kim, Minji
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Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Kim, Minji
Lee, Soo-Yeon
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Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
机构:
Kwangwoon Univ, Dept Elect Mat Engn, Gwangun Ro 20, Seoul 01897, South KoreaKwangwoon Univ, Dept Elect Mat Engn, Gwangun Ro 20, Seoul 01897, South Korea
Kim, Hwi-Su
Park, Hamin
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Kwangwoon Univ, Dept Elect Engn, Gwangun Ro 20, Seoul 01897, South KoreaKwangwoon Univ, Dept Elect Mat Engn, Gwangun Ro 20, Seoul 01897, South Korea
Park, Hamin
Cho, Won-Ju
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Kwangwoon Univ, Dept Elect Mat Engn, Gwangun Ro 20, Seoul 01897, South KoreaKwangwoon Univ, Dept Elect Mat Engn, Gwangun Ro 20, Seoul 01897, South Korea