Effect of tin (II and IV) iodide doping on organic-inorganic bismuth (III) iodide perovskite

被引：5

作者：

Yun, Yeonghun ^{[1
]}

Kim, Dokyum ^{[1
]}

Park, Byungjin ^{[1
]}

Heo, Young-Woo ^{[1
]}

Lee, Joon-Hyung ^{[1
]}

Lee, Sangwook ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea

来源：

MATERIALS LETTERS | 2020年 / 262卷

基金：

新加坡国家研究基金会;

关键词：

Perovskite; Halide; Fermi level; Doping; SOLAR-CELLS; LEAD-FREE; EFFICIENCY; METHYLAMMONIUM; DEPOSITION;

D O I：

10.1016/j.matlet.2019.127166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, effects of doping methylamine bismuth iodide (MBI, (CH3NH3)(3)Bi2I9), a lead-free perovskite halide material, with bismuth (III) iodide with the molar equivalent of tin (II or IV) iodides are investigated. The doping changes optical properties, surface chemical states, and energy band structure of MBI. SnI4 doping shifts the Fermi level toward the valence band, while SnI2 doping shifts it toward the conduction band. Our result demonstrates that Fermi level of a halide perovskite can be modified by doping. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：4

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