A radiation hard pixel design for x-ray imagers

被引：0
|
作者：
Zelakiewicz, Scott [1 ]
Albagli, Douglas [1 ]
Hennessy, William [1 ]
Couture, Aaron [1 ]
机构：
[1] Gen Elect Global Res, Niskayuna, NY 12309 USA
来源：
2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11 | 2007年
关键词：
D O I：
10.1109/NSSMIC.2007.4437133
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Extending the lifetime of amorphous silicon based radiation imagers is necessary for numerous applications including industrial inspection and radiation therapy. To achieve a longer lifetime, a new pixel design has been fabricated. This design incorporates a gated diode that significantly increase mitigates the effect of radiation damage. Additionally, each pixel incorporates a storage capacitor to increase the dynamic range of the pixel and a reflective layer to maximize the light collection efficiency. We report on the device performance of this design and the imaging performance of the complete detector.
引用
收藏
页码：4602 / 4603
页数：2
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