LUMINESCENCE PROPERTIES OF ZnS QUANTUM DOTS EMBEDDED IN POLYMER MATRIX

被引：0
|
作者：
Barman, Bijoy [1 ]
Sarma, K. C. [1 ]
机构：
[1] Gauhati Univ, Dept Instrumentat & USIC, Gauhati 781014, Assam, India
来源：
CHALCOGENIDE LETTERS | 2011年 / 8卷 / 03期
关键词：
Zinc Sulfide; Quantum dots; Blue shift; Luminescence; THIN-FILMS; OPTICAL-PROPERTIES; NANOPARTICLES; SIZE; NANOCRYSTALS; ABSORPTION; GROWTH; SURFACE; STATES;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc Sulfide (ZnS) quantum dots of sizes 2.68-4.8 nm, embedded on polyvinyl alcohol (PVA) matrix, have been synthesized at 70 degrees C by chemical route. X-ray diffraction (XRD), High Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), UV-VIS Spectroscopy and Photoluminescence (PL) Spectroscopy has been adopted for sample characterization. Optical absorption spectra showed strong blue shift, which is an indication of strong quantum confinement. Photoluminescence spectra of the sample have been recorded at room temperature and observed two peaks centred around 415 nm and 440 nm. We have assigned the first peak due to band gap transitions while the later due to sulfur vacancy in the sample.
引用
收藏
页码：171 / 176
页数：6
相关论文
共 50 条
  • [1] Green luminescence of ZnS and ZnS:Cu quantum dots embedded in zeolite matrix
    Nath, S. S.
    Chakdar, D.
    Gope, G.
    Kakati, J.
    Kalita, B.
    Talukdar, A.
    Avasthi, D. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [2] Luminescence properties of ZnS:Mn quantum dots
    Zhang, Xiaosong
    Li, Lan
    Dong, Dongqing
    Wang, Zhi
    Dong, Xiaoyi
    [J]. SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 167 - +
  • [3] Luminescent properties and excitation mechanism of ZnSe quantum dots embedded in ZnS Matrix
    Qian, Lei
    Zhang, Ting
    Teng, Feng
    Xu, Zheng
    Quan, Shanyu
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2006, 100 (2-3) : 337 - 339
  • [4] Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix
    Gruzintsev, A. N.
    Emelchenko, G. A.
    Masalov, V. M.
    Yakimov, E. E.
    Barthou, C.
    Maitre, A.
    [J]. SEMICONDUCTORS, 2009, 43 (02) : 197 - 201
  • [5] Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix
    A. N. Gruzintsev
    G. A. Emelchenko
    V. M. Masalov
    E. E. Yakimov
    C. Barthou
    A. Maitre
    [J]. Semiconductors, 2009, 43
  • [6] Luminescence properties of ZnS:Er quantum dots with NIR excitation
    Zhang, Xiaosong
    Dong, Xiaoyi
    Kai, Guiyun
    Dong, Dongqing
    Zhang, Yanfang
    Wang, Zhi
    [J]. SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 138 - +
  • [7] NIR luminescence properties of ZnS:Er,Yb quantum dots
    Zhang, Xiaosong
    Dong, Xiaoyi
    Li, Lan
    Wang, Zhi
    Liu, Yange
    Dong, Dongqing
    Zhang, Yanfang
    Kai, Guiyun
    [J]. OPTOELECTRONIC MATERIALS AND DEVICES II, 2007, 6782
  • [8] Fabrication and luminescence properties of self-assembled CdTe quantum dots embedded in an MnTe matrix
    Wojnar, P.
    Suffczynski, J.
    Golnik, A.
    Ebbens, A.
    Woggon, U.
    Karczewski, G.
    Kossut, J.
    [J]. PHYSICAL REVIEW B, 2009, 80 (19)
  • [9] Luminescence of CdS and CdS: Cu Quantum Dots Embedded in PVA Matrix
    Kakati, Jumi
    Baruah, P. K.
    Datta, Pranayee
    [J]. INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND NANOTECHNOLOGY (ICANN 2009), 2010, 1276 : 311 - +
  • [10] Role of the Polymer Matrix on the Photoluminescence of Embedded CdSe Quantum Dots
    Tselikov, Gleb I.
    Timoshenko, Victor Yu
    Golovan, Leonid A.
    Plenge, Juergen
    Shatalova, Alina M.
    Shandryuk, Georgiy A.
    Kutergina, Irina Yu
    Merekalov, Alexey S.
    Ruehl, Eckart
    Talroze, Raisa V.
    [J]. CHEMPHYSCHEM, 2015, 16 (05) : 1071 - 1078
12345