A band-structure model of strained quantum-well wurtzite semiconductors

被引：270
|
作者：
Chuang, SL
Chang, CS
机构：
[1] Dept. of Elec. and Comp. Engineering, Univ. Illinois at Urbana-Champaign, Urbana, IL 61801
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 03期
关键词：
D O I：
10.1088/0268-1242/12/3/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a theoretical model for calculating the band structures of strained quantum-well wurtzite semiconductors. The theory is based on the Hamiltonian for wurtzite semiconductors and includes the strain effects on the shifts of the band edges. We show new results that include the matrix elements of the Hamiltonian using the finite-difference method for the calculations of the valence electronic band structures of GaN/AlxGa1-xN quantum-well wurtzite semiconductors based on the effective-mass theory.
引用
收藏
页码：252 / 263
页数：12
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