Effect of fluorine ion implantation on radiation-induced processes in the insulator layer of silicon-on-insulator structures

被引：1
|
作者：
Gus'kova, O. P. [1 ]
Vorotyntsev, V. M. [2 ]
Abrosimova, N. D. [1 ]
Shobolov, E. L. [1 ]
Mineev, M. N. [1 ]
机构：
[1] Sedakov Res Inst Measuring Syst, Nizhnii Novgorod 603950, Russia
[2] Alekseev State Tech Univ, Nizhnii Novgorod 603600, Russia
来源：
INORGANIC MATERIALS | 2012年 / 48卷 / 03期
关键词：
Insulator Layer; Versus Curve; Test Structure; Thermal Interface; SIMOX;
D O I：
10.1134/S0020168512030053
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the effect of ionizing radiation on MOS/SOI structures with a fluorine-ion-implanted buried insulator layer. Analysis of their high- and low-frequency capacitance-voltage characteristics indicates that the fluorination of the buried insulator ensures a substantial reduction in the density of surface states and accumulated charge at the silicon/silica interface after exposure to ionizing radiation.
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页码：222 / 224
页数：3
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