High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

被引：14

作者：

Wang, Yu ^{[1
]}

Kizu, Takio ^{[2
]}

Song, Lei ^{[1
]}

Zhang, Yujia ^{[1
]}

Jiang, Sai ^{[1
]}

Qian, Jun ^{[1
]}

Wang, Qijing ^{[1
]}

Shi, Yi ^{[1
]}

Zheng, Youdou ^{[1
]}

Nabatame, Toshihide ^{[3
]}

Tsukagoshi, Kazuhito ^{[2
]}

Li, Yun ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, MANA Foundry & MANA Adv Device Mat Grp, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2016年 / 4卷 / 34期

关键词：

THIN-FILM TRANSISTORS; MOBILITY; DEVICES;

D O I：

10.1039/c6tc01768a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly( vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm(2) V-1 s(-1) in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

引用

页码：7917 / 7923

页数：7

共 50 条

[1] Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers
Kim, Richard H.
Park, Cheolmin
[J]. FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2016, 131 : 227 - 253
[2] Non-volatile ferroelectric superconducting field effect transistor
Ignatiev, A
Wu, NJ
Lin, H
Huang, TQ
Endicter, S
Li, XY
Liu, D
[J]. INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 327 - 334
[3] A high-performance buffer for non-volatile memories
De Ambrogi, L
Nicosia, S
Pagano, G
Palumbo, G
[J]. ICES 2002: 9TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-111, CONFERENCE PROCEEDINGS, 2002, : 611 - 614
[4] Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor
Gelinck, G. H.
van Breemen, A. J. J. M.
Cobb, B.
[J]. APPLIED PHYSICS LETTERS, 2015, 106 (09)
[5] Polymeric semiconductor for high-performance field-effect transistor and circuit
Liu, Yunqi
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
[6] A ferroelectric semiconductor field-effect transistor
Mengwei Si
Atanu K. Saha
Shengjie Gao
Gang Qiu
Jingkai Qin
Yuqin Duan
Jie Jian
Chang Niu
Haiyan Wang
Wenzhuo Wu
Sumeet K. Gupta
Peide D. Ye
[J]. Nature Electronics, 2019, 2 : 580 - 586
[7] A ferroelectric semiconductor field-effect transistor
Si, Mengwei
Saha, Atanu K.
Gao, Shengjie
Qiu, Gang
Qin, Jingkai
Duan, Yuqin
Jian, Jie
Niu, Chang
Wang, Haiyan
Wu, Wenzhuo
Gupta, Sumeet K.
Ye, Peide D.
[J]. NATURE ELECTRONICS, 2019, 2 (12) : 580 - 586
[8] Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory
Baeg, Kang-Jun
Noh, Yong-Young
Ghim, Jieun
Lim, Bogyu
Kim, Dong-Yu
[J]. ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (22) : 3678 - 3685
[9] Silicon-on-insulator non-volatile field-effect transistor memory
Schwank, JR
Shaneyfelt, MR
Meisenheimer, TL
Draper, BL
Vanhesden, K
Fleetwood, DM
[J]. MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 253 - 258
[10] Surface Directed Phase Separation of Semiconductor Ferroelectric Polymer Blends and their Use in Non-Volatile Memories
van Breemen, Albert
Zaba, Tomasz
Khikhlovskyi, Vsevolod
Michels, Jasper
Janssen, Rene
Kemerink, Martijn
Gelinck, Gerwin
[J]. ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (02) : 278 - 286

← 1 2 3 4 5 →