Photoconductivity in sprayed β-In2S3 thin films under sub-band-gap excitation of 1.96 eV

被引：41
|
作者：
Jayakrishnan, R. [1 ]
Sebastian, Tina [1 ]
John, Teny Theresa [1 ]
Kartha, C. Sudha [1 ]
Vijayakumar, K. P. [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 04期
关键词：
D O I：
10.1063/1.2770830
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
beta-In2S3 thin films with a band gap of similar to 2.67 eV exhibited persistent photoconductivity when excited using photons with energy of 1.96 eV. The photoconductive response to extrinsic photoexcitation could be removed when the film stoichiometry was changed. Photoluminescence studies in the films revealed an emission of 1.826 eV, due to donor-acceptor pair (DAP) recombination, which was absent in the film not responding to extrinsic excitation. Hence, it was concluded that presence of the DAP was responsible for the extrinsic photoconductivity under the 1.96 eV excitation. This study can initiate further a methodology for tailoring the photoresponse of this semiconducting thin film by spatially controlling the film stoichiometry.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Photoconductivity in sprayed Β -In2 S3 thin films under sub-band-gap excitation of 1.96 eV
    Jayakrishnan, R.
    Sebastian, Tina
    John, Teny Theresa
    Kartha, C. Sudha
    Vijayakumar, K.P.
    [J]. Journal of Applied Physics, 2007, 102 (04):
  • [2] Positive and negative photoconductivity in sprayed ?-In2S3 thin films
    Bouricha, B.
    Souissi, R.
    Bouguila, N.
    Jlidi, D.
    Labidi, A.
    [J]. MATERIALS RESEARCH EXPRESS, 2019, 6 (11)
  • [3] Do the grain boundaries of β-In2S3 thin films have a role in sub-band-gap photosensitivity to 632.8 nm?
    Jayakrishnan, R.
    John, Teny Theresa
    Kartha, C. Sudha
    Vijayakumar, K. P.
    Jain, Deepti
    Chandra, L. S. Sharath
    Ganesan, V.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)
  • [4] S/In molar ratio effect on the photoconductivity of the sprayed β-In2S3 thin films
    Y. Bchiri
    R. Souissi
    B. Bouricha
    N. Bouguila
    M. Kraini
    C. Vázquez-Vázquez
    M. A. López-Quintela
    S. Alaya
    [J]. Journal of Materials Science: Materials in Electronics, 2021, 32 : 27995 - 28006
  • [5] S/In molar ratio effect on the photoconductivity of the sprayed β-In2S3 thin films
    Bchiri, Y.
    Souissi, R.
    Bouricha, B.
    Bouguila, N.
    Kraini, M.
    Vazquez-Vazquez, C.
    Lopez-Quintela, M. A.
    Alaya, S.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (23) : 27995 - 28006
  • [6] Sub-band-gap photoconductivity in Co2+-doped ZnO
    Johnson, Claire A.
    Kaspar, Tiffany C.
    Chambers, Scott A.
    Salley, G. Mackay
    Gamelin, Daniel R.
    [J]. PHYSICAL REVIEW B, 2010, 81 (12):
  • [7] Sub-band-gap photoconductivity of individual α-Si3N4 nanowires
    Zhang, J. Y.
    Chen, Y. X.
    Guo, T. L.
    Lin, Z. X.
    Wang, T. H.
    [J]. NANOTECHNOLOGY, 2007, 18 (32)
  • [8] Electrical transport of sprayed In2S3:Ag thin films
    Tiss, B.
    Bouguila, N.
    Kraini, M.
    Khirouni, K.
    Vazquez-Vazquez, C.
    Cunha, L.
    Moura, C.
    Alaya, S.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 114 (114)
  • [9] Structural and photoelectrical properties of sprayed β-In2S3 thin films
    Bhira, L
    Essaidi, H
    Belgacem, S
    Couturier, G
    Salardenne, J
    Barreaux, N
    Bernede, JC
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 181 (02): : 427 - 435
  • [10] Ethanol sensing properties of sprayed β-In2S3 thin films
    Souissi, R.
    Bouguila, N.
    Labidi, A.
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2018, 261 : 522 - 530
12345