Model-based CMP (Chemical-Mechanical Polishing) Proximity Correction for Mitigating Systematic Process Variations

被引：0
|
作者：
Ban, Yongchan [1 ]
Kang, Yongseok [1 ]
Paik, Woohyun [1 ]
机构：
[1] LG Elect, Syst IC R&D Lab, 19 Yangjae Daero 11gil, Seoul 137130, South Korea
来源：
2015 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2015年
关键词：
CMP; metal fill; process variation; model-based;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper we have proposed a way of a model-based CMP proximity correction in sub-28nm SoC (system-on-a-chip) designs. Just like OPC (optical proximity correction) process against lithography variations, the proposed approach can be added at the mask synthesis stage in addition to the conventional metal fill approach and highly reduces the systematic process variation due to CMP.
引用
收藏
页码：7 / 8
页数：2
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