Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates

被引：38

作者：

Lim, WT ^{[1
]}

Son, BK ^{[1
]}

Kang, DH ^{[1
]}

Lee, CH ^{[1
]}

机构：

[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

来源：

THIN SOLID FILMS | 2001年 / 382卷 / 1-2期

关键词：

structural properties; sputtering; aluminum nitride; X-ray diffraction; scanning electron microscopy;

D O I：

10.1016/S0040-6090(00)01780-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural properties of r.f.-sputtered AIN films grown on Si, Ru/Si, and ZnO/Si substrates were investigated. From the X-ray diffraction analysis, the crystallite size, biaxial stress and standard deviation (S.D.) of the rocking curve for the ALN films are calculated. For AIN films prepared on Si substrates, a crystallite size of 205.7 Angstrom, a biaxial stress of -3.27 X 10(9) Pa and a S.D. of 5.96 degrees were obtained. For the AIN films prepared on the Ru/Si substrates, a crystallite size of 213.4 Angstrom, a biaxial stress of -9.80 X 10(9) Pa and a S.D. of 4.05 degrees were obtained. Likewise, a crystallite size of 293.4 Angstrom, a biaxial stress of +1.62 X 10(9) Pa and a S.D. of 1.19 degrees were obtained for the AIN films prepared on the ZnO/Si substrates. It is concluded that the ZnO/Si substrates are the most suitable for growing AIN films, compared with the other substrates. In addition, the strong c-axis orientation of the AIN films on the ZnO/Si substrates is found to have a direct relationship with the density of the films. It is shown that the growth behavior and quality of the AlN films can be successfully controlled by lattice matching with their substrates. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：56 / 60

页数：5

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