Spatial distribution of residual stress in diamond-silicon carbide composites

被引：3
|
作者：
Zerda, T. W. [1 ]
Wieligor, M. [1 ]
Ungar, T. [2 ]
Palosz, B. [3 ]
机构：
[1] Dept Phys, TCU Box 298840, Ft Worth, TX 76133 USA
[2] ELTE, Dept Mat Phys, Budapest, Hungary
[3] Polish Acad Sci, Inst High Pressure Phys, Warsaw, Poland
来源：
JOINT 21ST AIRAPT AND 45TH EHPRG INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY | 2008年 / 121卷
基金：
匈牙利科学研究基金会;
关键词：
D O I：
10.1088/1742-6596/121/6/062007
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Raman spectroscopy and x-ray diffraction whole profile analysis were used to analyze strain in diamond crystals in diamond-silicon carbide composites. The composites were obtained by the infiltration technique from diamond and silicon powders at 8 GPa and 2173 K. Frequency shifts of Raman peak of diamond were used to calculate residual stress and then to draw maps of stress distribution on the surface of diamonds. Large stresses were formed near contact points between diamond crystals. Analysis of profiles of three x-ray reflections of diamond provided information on dislocations and crystallites sizes. After sintering crystallites which scattered x-ray coherently had small sizes which depended on the dimensions of diamond crystal used in the sintering process.
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页数：4
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