The Influence on the Performance of Power Double Diffused MOSFET with Different Gate Layout Geometries

被引：3
|
作者：
Liu Xia [1 ]
Chen Wen-Gao [1 ]
Wang Wen [1 ]
Yi Yang-Bo [1 ]
Sun Wei-Feng [1 ]
机构：
[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
来源：
IETE TECHNICAL REVIEW | 2010年 / 27卷 / 05期
关键词：
Breakdown voltage; Gate corner; Layout geometry; Power DMOS; Threshold voltage;
D O I：
10.4103/0256-4602.62227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence on the performance of power Double Diffused MOSFET (DMOS) with different gate layout geometries has been analyzed. The investigation shows that the gate layout geometry will greatly affect the dopant concentration of the channel region, so as to influence the average threshold voltage shift and the breakdown voltage. The internal mechanism has also been explained and analyzed in detail, so as to find out the optimization design of the polygate geometry.
引用
收藏
页码：421 / 425
页数：5
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