The electrical conductivity behavior of a fluorinated self-assembled monolayer (FSAM) of a molybdenum oxide (MoOx)-doped -naphthyl diamine derivative (-NPD) in organic light-emitting diodes (OLEDs) was investigated. The current density of the MoOx-doped -NPD/FSAM device was proportional to its voltage owing to smooth carrier injection through the FSAM and the high carrier density of its bulk. The temperature-dependent characteristics of this device were investigated. The current density-voltage characteristics at different temperatures were almost the same owing to its very low activation energy. The activation energy of the device was estimated to be 1.056x10(-2) [eV] and was very low due to the inelastic electron tunneling of FSAM molecules. Copyright (c) 2014 John Wiley & Sons, Ltd.
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Hongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South KoreaHongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South Korea
Kim, Hye Rim
Jo, Ho Keun
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Hongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South KoreaHongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South Korea
Jo, Ho Keun
Hong, Jin Woong
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Kwangwoon Univ, Dept Elect Engn, Seoul, South KoreaHongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South Korea
Hong, Jin Woong
Park, Sang-Geon
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Silla Univ, Dept Elect & Elect Engn, Busan, South KoreaHongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South Korea
Park, Sang-Geon
Kim, Tae Wan
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Hongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South KoreaHongik Univ, Dept Informat Display Engn, Sangsu Dong, Seoul 04066, South Korea
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Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
Liu, Chia-Wei
Tsai, Ming-Chih
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Institute of Chemistry, Academia Sinica, Taipei,11529, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
Tsai, Ming-Chih
Cheng, Tsung-Chin
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Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
Cheng, Tsung-Chin
Ho, Yu-Hsuan
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Institute of Chemistry, Academia Sinica, Taipei,11529, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
Ho, Yu-Hsuan
You, Huang-Kuo
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Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
You, Huang-Kuo
Li, Chia-Shuo
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Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
Li, Chia-Shuo
Chen, Chin-Ti
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Institute of Chemistry, Academia Sinica, Taipei,11529, TaiwanDepartment of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei,10617, Taiwan
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Hongik Univ, Dept Informat Display Engn, Seoul, South KoreaHongik Univ, Dept Informat Display Engn, Seoul, South Korea
Kim, Hye Rim
Kim, Tae-Wan
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Hongik Univ, Dept Informat Display Engn, Seoul, South KoreaHongik Univ, Dept Informat Display Engn, Seoul, South Korea
Kim, Tae-Wan
Park, Sang-Geon
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Silla Univ, Div Smart Elect & Elect Engn, 140 Baegyangdaero 700Beon Gil, Busan 46958, South KoreaHongik Univ, Dept Informat Display Engn, Seoul, South Korea